B.Sc.  Electronics    Year - I 1. PAPER-I Circuit Analysis and Electronic Devices Unit I - 30 Hrs AC Fundamentals: The Sine wave –Average and RMS values–The J operator – Polar and rectangular forms of complex numbers – Phasor diagram – Complex impedance and admittance.Passive networks: Concept of voltage and current sources – KVL and KCL- Application to simple circuits (AC and DC) consisting of resistors and sources (one or two) - Node voltage analysis and method of mesh currents. Network theorems (DC and AC): Superposition Theorem–Thevenin's Theorem– Norton's Theorem–Maximum power transfer Theorem–Millman Theorem- Reciprocity Theorem – Application to simple networks. 2.   UNIT- II (30 hours) RC and RL Circuits: Transient response of RL and RC circuits with step input– time constants. Frequency response of RC and RL circuits – Types of Filters: Low pass filter – High pass filter – frequency response - Passive differentiating and integrating circuits. Resonance: Series resonance and parallel resonance RLC circuits – Resonant frequency – Q factor – Band width – Selectivity. 3. Unit III (30 hours) PN Junction: Depletion region – Junction capacitance – Diode equation (no derivation) – Effect of temperature on reverse saturation current. Construction, working, V-I characteristics and simple applications of i) Junction diode ii) Zener diode iii) Tunnel diode and iv) Varactor diode. Bipolar Junction Transistor (BJT): PNP and NPN transistors–current components in BJT – BJT static characteristics (Input and Output) – Early effect- CB, CC,CE configurations (cut off, active, and saturation regions) CE configuration as two port network – h-parameters – h-parameter equivalent circuit. Experimental arrangement to study input and output characteristics of BJT in CE configuration. Determination of h-parameters from the characteristics. Biasing and load line analysis – Fixed bias and self bias arrangement. 4. Unit IV (30 hours) Field Effect Transistor (FET): Structure and working of JFET and MOSFET – output and transfer characteristics – Experimental arrangement for studying the characteristics and to determine FET parameters. Application of FET as voltage variable resistor and MOSFET as a switch – Advantages of FET over transistor. Uni Junction Transistor (UJT): Structure and working of UJT- Characteristics. Application of UJT as a relaxation oscillator. Silicon Controlled Rectifier (SCR): Structure and working of SCR. Two transistor representation, Characteristics of SCR. Experimental set up to study the SCR characteristics. Application of SCR for power control. Photo Electric Devices: Structure and operation of LDR, Photo voltaic cell, Photo diode, Photo transistors and LED. (NOTE: Solving related problems in all the Units). 5.Text Books: 1. Grob's Basic Electronics , Mitchel E.Schultz 10th Edn. Tata McGraw Hill 2. Network lines and fields, Ryder- Prentice Hall of India Circuit analysis, P.Gnanasivam- Pearson Education 3. Electronic Devices and Circuits, Millman and Halkias - Tata McGraw Hill TMH 4. Electronic Devices and Circuits, Allen Mottershead - Prentice Hall of India 5. Electronic Devices and Circuit Theory, R.L.Boylestad and L.Nashelsky- Pearson Education. 6. Pulse digital switching waveforms , Millman &Taub - Tata McGraw Hill . 7. A First course in Electronics, AA Khan & KK Day - Prentice Hall of India Reference Books: 1. Circuits and Networks, A.Sudhakar & Shyammohan S. Palli - Tata McGraw Hill 2. Network Theory, Smarajit Ghosh - - Prentice Hall of India 3. Principles of Electronics- V.K. Mehta and Rohit Mehta - S Chand &Co 4. Applied Electronics- R.S.Sedha - S Chand &Co 5. Principles of Electronic circuits- Stanely G.Burns and Paul R. Bond- Galgotia. 6. Electronic Principles and Applications – A.B. Bhattacharya- New Central Book Agency